MgF2 - Magnesium Fluoride
InAs - Indium Arsenide
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Indium arsenide is a semiconductor material made of arsenic and indium. The semiconductor has a melting point of 942 °C and appears in the form of grey crystals with a cubic structure. It is very similar to gallium arsenide and is a material having a direct bandgap. Indium arsenide is popular for its narrow energy bandgap and high electron mobility.
The applications of indium arsenide are listed below:
- Indium arsenide is used to construct infrared detectors for a wavelength range of 1–3.8 µm. The detectors are normally photovoltaic photodiodes.
- Detectors that are cryogenically cooled have low noise but InAs detectors can be used in high-power applications at room temperature also.
- Diode lasers are also made using indium arsenide.
- Indium arsenide and gallium arsenide are similar and it is a direct bandgap material.
- It is used as a terahertz radiation source.
- It is possible to form quantum dots in a monolayer of indium arsenide on gallium arsenide or indium phosphide
- It is also possible to form quantum dots in indium gallium arsenide in the form of indium arsenide dots arranged in the gallium arsenide matrix.
Infrared Senser Detectors
Hyperspectral and multispectral imaging in the food and beverage industries
Silicon CCD cameras
Food colour measurement using computer vision
Infrared (IR) Spectroscopy—Near-Infrared Spectroscopy and Mid-Infrared Spectroscopy
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